Datasheet > MSN0790K

MSN0790K

更新时间： 2024-11-15 01:23:11

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	496K
描述
70V(D-S) N-Channel Enhancement Mode Power MOS FET

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中文翻译

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数据手册

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MSN0790K 数据手册

MSN0790K

70V(D-S) N-Channel

Enhancement Mode Power MOS FET

General Features

● V_DS= 70V,I_D=90A

R_DS(ON)< 7m Ω @ V_GS=10V (Typ:5.9mΩ)

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Lead Free

Application

● Power switching application

● Hard switched and High frequency circuits

● Uninterruptible power supply

Marking and pin assignment

PIN Configuration

Schematic diagram

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN0790K

TO-220-3L

MSN0790K

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

±20

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

320

170

1.13

550

Maximum Power Dissipation

P_D

Derating factor

W/℃

℃

Single pulse avalanche energy ^{(Note 5)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

MORE Semiconductor Company Limited

http://www.moresemi.com

1/6

12 3 4 5 6

中文翻译

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