Datasheet > MSN0620D

MSN0620D

更新时间： 2024-11-15 01:19:15

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	673K
描述
60V(D-S) N-Channel Enhancement Mode Power MOS FET

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中文翻译

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数据手册

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MSN0620D 数据手册

MSN0620D

60V(D-S) N-ChannelEnhancement Mode Power MOS FET

GENERAL FEATURES

● V_DS=60V,I_D=20A

R_DS(ON)<45mΩ @ V_GS=10V

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Lead Free

Application

●

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

Marking and pin Assignment

PIN Configuration

TO-252-2L top view

Schematic diagram

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2500PCS

MSN0620D

TO-252-2L

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

±20

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

P_D

Derating factor

0.27

W/℃

℃

Single pulse avalanche energy (Note 5)

Operating Junction and Storage Temperature Range

E_AS

-55 To 175

T_J,T_STG

MORE Semiconductor Company Limited

http://www.moresemi.com

1/6

12 3 4 5 6

中文翻译

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