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MSN06B5K-TO220 PDF预览

MSN06B5K-TO220

更新时间: 2024-11-15 01:17:59
品牌 Logo 应用领域
摩矽 - MORESEMI /
页数 文件大小 规格书
6页 527K
描述
60V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN06B5K-TO220 数据手册

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MSN06B5K  
60V(D-S) N-Channel Enhancement Mode Power MOS FET  
General Features  
VDS =60V,ID =150A  
RDS(ON) <4.5m@ VGS=10V  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Special process technology for high ESD capability  
Lead Free  
Application  
Power switching application  
Hard switched and high frequency circuits  
Uninterruptible power supply  
PIN Configuration  
Marking and pin assignment  
Schematic diagram  
TO-220-3L top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
MSN06B5K  
MSN06B5K  
TO-220-3L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
VDS  
±20  
VGS  
150  
105  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
600  
A
Maximum Power Dissipation  
220  
W
PD  
Derating factor  
Single pulse avalanche energy (Note 5)  
1.47  
1400  
W/℃  
mJ  
EAS  
Operating Junction and Storage Temperature Range  
-55 To 175  
TJ,TSTG  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
1/6  

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