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MSN0650Z PDF预览

MSN0650Z

更新时间: 2024-11-15 01:23:11
品牌 Logo 应用领域
摩矽 - MORESEMI /
页数 文件大小 规格书
6页 431K
描述
60V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0650Z 数据手册

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MSN0650Z  
60V(D-S) N-Channel Enhancement Mode Power MOS FET  
General Features  
VDS =60V,ID =50A  
RDS(ON) <20m@ VGS=10V  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Special process technology for high ESD capability  
Lead Free  
Application  
Power switching application  
Hard switched and high frequency circuits  
Uninterruptible power supply  
PIN Configuration  
Marking and pin assignment  
Schematic diagram  
TO-251 top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
MSN0650Z  
MSN0650Z  
TO-251  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
60  
Unit  
V
Drain-Source Voltage  
VDS  
VGS  
Gate-Source Voltage  
±20  
V
Drain Current-Continuous  
50  
35  
A
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
220  
A
Maximum Power Dissipation  
Derating factor  
Single pulse avalanche energy (Note 5)  
80  
W
PD  
0.53  
W/℃  
mJ  
EAS  
115  
Operating Junction and Storage Temperature Range  
-55 To 175  
TJ,TSTG  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
1/6  

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