Datasheet > MSN06B0K

MSN06B0K

更新时间： 2024-11-15 01:19:15

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	534K
描述
60V(D-S) N-Channel Enhancement Mode Power MOS FET

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中文翻译

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数据手册

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MSN06B0K 数据手册

MSN06B0K

60V(D-S) N-Channel Enhancement Mode Power MOS FET

General Feature

● V_DS=60V,I_D=100A

R_DS(ON)< 6.5mΩ @ V_GS=10V (Typ:5.7mΩ)

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Lead Free

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

PIN Configuration

Marking and pin assignment

TO-220-3L top view

Schematic diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN06B0K

TO-220-3L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

100

I_D

Drain Current-Continuous(T_C=100℃)

I_D(100℃)

I_DM

Pulsed Drain Current

320

Maximum Power Dissipation

170

1.13

550

W/℃

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

℃

T_J,T_STG

MORE Semiconductor Company Limited

http://www.moresemi.com

1/6

12 3 4 5 6

中文翻译

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