Datasheet > MSN0620Z-TO251

MSN0620Z-TO251

更新时间： 2024-11-15 01:17:59

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	500K
描述
60V(D-S) N-Channel Enhancement Mode Power MOS FET

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中文翻译

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数据手册

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MSN0620Z-TO251 数据手册

MSN0620Z

60V(D-S) N-Channel Enhancement Mode Power MOS FET

Genera Features

● V_DS=60V,I_D=20A

R_DS(ON)<44mΩ @ V_GS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Lead Free

Application

●

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Marking and pin assignment

PIN Configuration

Schematic diagram

TO-251 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN0620Z

TO-251

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.2

W/℃

℃

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

MORE Semiconductor Company Limited

http://www.moresemi.com

1/6

12 3 4 5 6

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