Datasheet > MSN05B2K

MSN05B2K

更新时间： 2024-11-15 01:19:15

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	490K
描述
55V(D-S) N-Channel Enhancement Mode Power MOS FET

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数据手册

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MSN05B2K 数据手册

MSN05B2K

55V(D-S) N-Channel

Enhancement Mode Power MOS FET

General Features

● V_DS=55V,I_D=120A

R_DS(ON)< 5.5mΩ @ V_GS=10V (Typ:4.1mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Lead Free

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Marking and pin assignment

PIN Configuration

Schematic diagram

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN05B2K

TO-220-3L

MSN05B2K

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

120

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

420

200

1.33

1100

Maximum Power Dissipation

P_D

Derating factor

W/℃

℃

Single pulse avalanche energy ^{(Note 5)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

MORE Semiconductor Company Limited

http://www.moresemi.com

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