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MSC2X30SDA170 PDF预览

MSC2X30SDA170

更新时间: 2024-11-02 14:53:51
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
7页 1091K
描述
MSC2X30SDA170 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Micro

MSC2X30SDA170 数据手册

 浏览型号MSC2X30SDA170的Datasheet PDF文件第2页浏览型号MSC2X30SDA170的Datasheet PDF文件第3页浏览型号MSC2X30SDA170的Datasheet PDF文件第4页浏览型号MSC2X30SDA170的Datasheet PDF文件第5页浏览型号MSC2X30SDA170的Datasheet PDF文件第6页浏览型号MSC2X30SDA170的Datasheet PDF文件第7页 
MSC2X31/30SDA170J Dual Silicon Carbide Schottky Barrier Diodes  
Product Overview  
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the  
performance over silicon diode solutions while lowering the total cost of ownership for high-voltage  
applications. MSC2X31/30SDA170J are dual 1700 V, 30 A SiC SBD devices in a SOT-227 package.  
Figure 2 • Anti-parallel MSC2X30SDA170J  
Figure 1 • Parallel MSC2X31SDA170J  
Features  
The following are key features of the MSC2X31SDA170J and MSC2X30SDA170J devices:  
No reverse recovery  
Low forward voltage  
Low leakage current  
Avalanche-energy rated  
RoHS compliant  
Isolated voltage to 2500 V  
Benefits  
The following are benefits of the MSC2X31SDA170J and MSC2X30SDA170J devices:  
Outstanding performance at high-frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction-to-case thermal resistance  
RoHS compliant  
053-4110 MSC2X31/30SDA170J Datasheet Revision A  
1

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