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MSC3130

更新时间: 2024-09-26 22:39:55
品牌 Logo 应用领域
乐山 - LRC 晶体射频放大器晶体管光电二极管
页数 文件大小 规格书
1页 41K
描述
NPN RF Amplifier Transistor Surface Mount

MSC3130 数据手册

  
LESHAN RADIO COMPANY, LTD.  
NPN RF Amplifier Transistor  
Surface Mount  
MSC3130T1  
COLLECTOR  
3
3
2
1
2
1
CASE 318D–03, STYLE 1  
BASE  
EMITTER  
SC–59  
MAXIMUM RATINGS (T A = 25 °C)  
Rating  
Symbol  
V CBO  
Value  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
15  
10  
3.0  
50  
V CEO  
Vdc  
V
Vdc  
EBO  
Collector Current - Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
IC  
mAdc  
Symbol  
PD  
Max  
200  
150  
Unit  
mW  
°C  
Power Dissipation  
Junction Temperature  
Storage Temperature  
T J  
T stg  
–55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (T A = 25 °C)  
Characteristic  
Symbol  
Min  
Max  
Unit  
Collector Cutoff Current  
ICBO  
1.0  
µAdc  
(V CB = 10 Vdc, I E = 0)  
Collector-Emitter Breakdown Voltage  
(I C = 2.0 mAdc, I B = 0)  
V CEO  
10  
3.0  
75  
Vdc  
Vdc  
Emitter-Base Breakdown Voltage  
(I E = 10 µAdc, I C = 0)  
DC Current Gain (1)  
V
EBO  
h FE  
V CE(sat)  
tf T  
400  
0.5  
2.5  
(V CE = 4.0 Vdc, I C = 5.0 mAdc)  
Collector-Emitter Saturation Voltage  
(I C = 20 mAdc, IB = 4.0 mAdc)  
Current-Gain–Bandwidth Produc  
(V CB = 4.0 Vdc, I E = -5.0 mAdc)  
Vdc  
GHz  
1.4  
1. Pulse Test: Pulse Width  
< 300 µs, D.C.<2%.  
DEVICE MARKING  
Marking Symbol  
1S X  
The “X” represents a smaller alpha digit Date Code. The Date Code  
indicates the actual month in which the part was manufactured.  
N5–1/1  

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