Datasheet > MSC300HF120T2NH

MSC300HF120T2NH

更新时间： 2024-05-23 22:23:23

品牌	Logo	应用领域
银茂微 - SILVERMICRO		/
页数	文件大小	规格书
6页	234K
描述
SiC MOS-Half Bridge-1200V

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MSC300HF120T2NH 数据手册

MSC300HF120T2NH

Preliminary Data

SiC MOSFET Module

Features：



Low On-resistance

Fast Switching Speed

Fast Reverse Recovery

Simple to Drive

Easy of Parallel

Copper Baseplate and Aluminum Nitride Insulator

Applications：



Induction Heating

Motor Drivers

Solar and Wind Inverters

Switch Mode Power Supplies

DC/DC Converters

Absolute Maximum Ratings (T_C=25℃unless otherwise specified)

Symbol

V_DSmax

V_GSmax

Description

Value

1200

-4/+22

570

Units

Drain-Source Voltage

Gate-Source Voltage

Absolute Maximum values

_GS=18V,T_C=25℃

I_D

Continuous Drain Current

V_GS=18V,T_C=100℃

300

Pulse width≦10us,

Duty Cycles≦100%

I_D(pluse)

I_S

Pulsed Drain Current

1422

570

Continuous Source Current

(body diode)

T_J= 25℃

Pulse width≦10us,

Duty Cycles≦100%

I_SM

Peak Source Current Repetitive

Power Dissipation

1422

2500

P_D

T_c=25℃，T_j=175℃

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Page 1 Rev. 01

10/17/2017

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