Datasheet > MSC2X50SDA170

MSC2X50SDA170

更新时间： 2023-12-06 20:08:04

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
7页	1116K
描述
MSC2X50SDA170 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Micro

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MSC2X50SDA170 数据手册

MSC2X51/50SDA170J Dual Silicon Carbide Schottky Barrier Diodes

Product Overview

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the

performance over silicon diode solutions while lowering the total cost of ownership for high-voltage

applications. MSC2X51/50SDA170J are dual 1700 V, 50 A SiC SBD devices in a SOT-227 package.

Figure 2 • Anti-parallel MSC2X50SDA170J

Figure 1 • Parallel MSC2X51SDA170J

Features

The following are key features of the MSC2X51SDA170J and MSC2X50SDA170J devices:

•

No reverse recovery

Low forward voltage

Low leakage current

Avalanche-energy rated

RoHS compliant

Isolated voltage to 2500 V

Beneﬁts

The following are beneﬁts of the MSC2X51SDA170J and MSC2X50SDA170J devices:

•

Outstanding performance at high-frequency operation

Direct mounting to heatsink (isolated package)

Low junction-to-case thermal resistance

RoHS compliant

•

053-4111 MSC2X51/50SDA170J Datasheet Revision A

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
MSC2X51SDA070	MICROCHIP	获取价格	MSC2X51SDA070 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) device
MSC2X51SDA120	MICROCHIP	获取价格	MSC2X51SDA120 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) device
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