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MSC3130

更新时间： 2024-09-26 22:39:55

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安森美 - ONSEMI		晶体射频放大器晶体管光电二极管
页数	文件大小	规格书
4页	108K
描述
NPN RF Amplifier Transistor Surface Mount

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MSC3130 数据手册

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by MSC3130T1/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

COLLECTOR

BASE

EMITTER

CASE 318D–03, STYLE 1

SC–59

MAXIMUM RATINGS (T = 25°C)

Rating

Collector–Base Voltage

Symbol

Value

Unit

Vdc

CBO

CEO

EBO

Collector–Emitter Voltage

Emitter–Base Voltage

Vdc

3.0

Vdc

Collector Current — Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C

Power Dissipation

Junction Temperature

Storage Temperature

150

stg

–55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T = 25°C)

Characteristic

Symbol

Min

Max

Unit

Collector Cutoff Current

—

1.0

µAdc

Vdc

—

CBO

= 10 Vdc, I = 0)

Collector–Emitter Breakdown Voltage

(I = 2.0 mAdc, I = 0)

3.0

—

CEO

Emitter–Base Breakdown Voltage

EBO

(I = 10 µAdc, I = 0)

(1)

DC Current Gain

400

0.5

2.5

= 4.0 Vdc, I = 5.0 mAdc)

Collector–Emitter Saturation Voltage

(I = 20 mAdc, I = 4.0 mAdc)

—

Vdc

GHz

CE(sat)

Current–Gain — Bandwidth Product

(V = 4.0 Vdc, I = –5.0 mAdc)

1.4

1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.

DEVICE MARKING

Marking Symbol

1S^X

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month

in which the part was manufactured.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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