Datasheet > MSC360SMA120

MSC360SMA120

更新时间： 2023-12-06 20:10:27

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
16页	6990K
描述
MSC360SMA120 is part of our newest family of SiC MOSFET devices.?Microchip's SiC solutions focus o

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MSC360SMA120 数据手册

MSC360SMA120S

1200 V, 360 mΩ SiC N-Channel Power MOSFET

Product Overview

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon

MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The

MSC360SMA120S device is a 1200 V, 360 mΩ SiC MOSFET in a TO-268 (D3PAK) package.

Features

The following are key features of the MSC360SMA120S device:

•

Low capacitances and low gate charge

Fast switching speed due to low internal gate resistance (ESR)

Stable operation at high junction temperature, T_J(max)= 175 °C

Fast and reliable body diode

Superior avalanche ruggedness

RoHS compliant

Benefits

The following are benefits of the MSC360SMA120S device:

•

High efficiency to enable lighter, more compact system

Simple to drive and easy to parallel

Improved thermal capabilities and lower switching losses

Eliminates the need for external freewheeling diode

Lower system cost of ownership

Applications

The MSC360SMA120S device is designed for the following applications:

•

PV inverter, converter, and industrial motor drives

Smart grid transmission and distribution

Induction heating and welding

H/EV powertrain and EV charger

Power supply and distribution

DS-00004071A-page 1

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