Datasheet > MSC4606W

MSC4606W

更新时间： 2024-02-28 14:02:04

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
9页	576K
描述
N and P-Channel Enhancement Mode Power MOS FET

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中文翻译

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数据手册

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MSC4606W 数据手册

MSC4606W

N and P-Channel Enhancement Mode Power MOS FET

General Features

● N-Channel

V_DS= 30V,I_D=6.5A

R_DS(ON)< 30mΩ @ V_GS=10V

Lead Free

● P-Channel

V_DS= -30V,I_D= -7A

R_DS(ON)< 33mΩ @ V_GS=-10V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and pin assignment

PIN Configuration

N-channel

P-channel

Schematic diagram

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSC4606W

SOP-8

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V_DS

N-Channel P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

-30

±20

V_GS

T_A=25℃

T_A=70℃

6.5

-7

Continuous Drain Current

I_D

5.4

-5.8

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

-30

T_A=25℃

2.0

℃

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

MORE Semiconductor Company Limited

http://www.moresemi.com

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