生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.4 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.15 A |
配置: | Single | 最小直流电流增益 (hFE): | 15 |
JESD-609代码: | e0 | 最高工作温度: | 200 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 3.89 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
端子面层: | TIN LEAD | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSC4001 | ADPOW |
获取价格 |
RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS | |
MSC4003 | ADPOW |
获取价格 |
RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS | |
MSC4003E3 | MICROSEMI |
获取价格 |
RF Power Bipolar Transistor, S Band, Silicon, NPN, S010 | |
MSC40SM120JCU2-Module | MICROCHIP |
获取价格 |
SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow str | |
MSC40SM120JCU3-Module | MICROCHIP |
获取价格 |
SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow str | |
MSC4606W | MORESEMI |
获取价格 |
N and P-Channel Enhancement Mode Power MOS FET | |
MSC4606W-SOP8 | MORESEMI |
获取价格 |
N and P-Channel Enhancement Mode Power MOS FET | |
MSC50DC120HJ | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, | |
MSC50DC120HJ-Module | MICROCHIP |
获取价格 |
SiC Schottky DiodeZero reverse recoveryZero forward recoveryTemperature Independent switch | |
MSC50DC170HJ | MICROSEMI |
获取价格 |
Rectifier Diode, |