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MSC3930-BT1G PDF预览

MSC3930-BT1G

更新时间: 2024-01-13 02:01:21
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管射频光电二极管
页数 文件大小 规格书
2页 42K
描述
NPN RF Amplifier Transistor

MSC3930-BT1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SC-70包装说明:LEAD FREE, CASE 419-04, SC-70, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.38最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

MSC3930-BT1G 数据手册

 浏览型号MSC3930-BT1G的Datasheet PDF文件第2页 
MSC3930−BT1  
Preferred Device  
NPN RF Amplifier Transistor  
Pb−Free Package is Available  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Value  
30  
Unit  
Vdc  
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
V
V
20  
Vdc  
5.0  
30  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
2
1
BASE  
EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
mW  
°C  
MARKING  
DIAGRAM  
3
Power Dissipation  
P
D
Junction Temperature  
Storage Temperature  
T
J
150  
1
2
T
stg  
55 ~ +150  
°C  
VB MG  
G
SOT−323/SC−70  
CASE 419  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1
STYLE 3  
VB = Specific Device Code  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
ORDERING INFORMATION  
Collector−Base Cutoff Current  
(V = 10 Vdc, I = 0)  
I
0.1  
μAdc  
CBO  
CB  
E
Device  
Package  
Shipping  
(1)  
DC Current Gain  
h
FE  
MSC3930−BT1  
MSC3930−BT1G  
SC−70  
3000/Tape & Reel  
3000/Tape & Reel  
(V = 10 Vdc, I = −1.0 mAdc)  
70  
140  
CB  
C
SC−70  
(Pb−Free)  
Collector−Gain — Bandwidth  
Product  
f
150  
MHz  
T
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
(V = 10 Vdc, I = −1.0 mAdc)  
CB  
E
Reverse Transistor Capacitance  
(V = 10 Vdc, I = 1.0 mAdc, f =  
C
1.5  
pF  
re  
CE  
C
10.7 MHz)  
1. Pulse Test: Pulse Width 300 μs, D.C. 2%.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
October, 2005 − Rev. 3  
MSC3930−BT1/D  

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