Datasheet > MSC4003

MSC4003

更新时间： 2024-02-09 13:31:14

品牌	Logo	应用领域
ADPOW		晶体射频和微波放大器晶体管
页数	文件大小	规格书
4页	189K
描述
RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MSC4003 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, O-CXFM-F2
Reach Compliance Code：	unknown	风险等级：	5.84
外壳连接：	EMITTER	最大集电极电流 (IC)：	0.5 A
基于收集器的最大容量：	5 pF	配置：	SINGLE
最高频带：	C BAND	JESD-30 代码：	O-CXFM-F2
元件数量：	1	端子数量：	2
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	UNSPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

MSC4003 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MSC4003

RF AND MICROWAVE TRANSISTORS

GENERAL PURPOSE AMPLIFIER APPLICATIONS

Features

3:1 VSWR AT RATED CONDITIONS

HERMETIC STRIPAC^âPACKAGE

P_OUT= 2.5 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz

DESCRIPTION:

The MSC4003 common-base, hermetically sealed silicon NPN

microwave power transistor features a unique Microgridä

structure and can withstand 3:1 VSWR at any phase angle under

rated conditions. It is designed for Class C amplifier applications

in the 2.0 – 4.4 GHz frequency range.

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)

Symbol

Parameter

Value

Unit

P_DISS

I_C

Power Dissipation*

Device Current*

14.0

0.5

V_CC

T_J

Collector Supply Voltage*

Junction Temperature (Pulsed RF Operation)

Storage Temperature

+200

°C

T_STG

-65 to +200

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance*

12.5

°C/W

*Applies only to rated RF amplifier operation

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

12 3 4

中文翻译

下载PDF

与MSC4003相关器件

型号	品牌	获取价格	描述	数据表
MSC4003E3	MICROSEMI	获取价格	RF Power Bipolar Transistor, S Band, Silicon, NPN, S010
MSC40SM120JCU2-Module	MICROCHIP	获取价格	SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow str
MSC40SM120JCU3-Module	MICROCHIP	获取价格	SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow str
MSC4606W	MORESEMI	获取价格	N and P-Channel Enhancement Mode Power MOS FET
MSC4606W-SOP8	MORESEMI	获取价格	N and P-Channel Enhancement Mode Power MOS FET
MSC50DC120HJ	MICROSEMI	获取价格	Bridge Rectifier Diode,
MSC50DC120HJ-Module	MICROCHIP	获取价格	SiC Schottky DiodeZero reverse recoveryZero forward recoveryTemperature Independent switch
MSC50DC170HJ	MICROSEMI	获取价格	Rectifier Diode,
MSC50DC170HJ-Module	MICROCHIP	获取价格	SiC Schottky DiodeZero reverse recoveryZero forward recoveryTemperature Independent switch
MSC50DC70HJ	MICROSEMI	获取价格	Bridge Rectifier Diode,