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MSC3930-BT1 PDF预览

MSC3930-BT1

更新时间: 2024-09-29 04:14:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管射频
页数 文件大小 规格书
2页 42K
描述
NPN RF Amplifier Transistor

MSC3930-BT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SC-70包装说明:CASE 419-04, SC-70, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
Factory Lead Time:1 week风险等级:5.37
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):70
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

MSC3930-BT1 数据手册

 浏览型号MSC3930-BT1的Datasheet PDF文件第2页 
MSC3930−BT1  
Preferred Device  
NPN RF Amplifier Transistor  
Pb−Free Package is Available  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Value  
30  
Unit  
Vdc  
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
V
V
20  
Vdc  
5.0  
30  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
2
1
BASE  
EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
mW  
°C  
MARKING  
DIAGRAM  
3
Power Dissipation  
P
D
Junction Temperature  
Storage Temperature  
T
J
150  
1
2
T
stg  
55 ~ +150  
°C  
VB MG  
G
SOT−323/SC−70  
CASE 419  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1
STYLE 3  
VB = Specific Device Code  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
ORDERING INFORMATION  
Collector−Base Cutoff Current  
(V = 10 Vdc, I = 0)  
I
0.1  
μAdc  
CBO  
CB  
E
Device  
Package  
Shipping  
(1)  
DC Current Gain  
h
FE  
MSC3930−BT1  
MSC3930−BT1G  
SC−70  
3000/Tape & Reel  
3000/Tape & Reel  
(V = 10 Vdc, I = −1.0 mAdc)  
70  
140  
CB  
C
SC−70  
(Pb−Free)  
Collector−Gain — Bandwidth  
Product  
f
150  
MHz  
T
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
(V = 10 Vdc, I = −1.0 mAdc)  
CB  
E
Reverse Transistor Capacitance  
(V = 10 Vdc, I = 1.0 mAdc, f =  
C
1.5  
pF  
re  
CE  
C
10.7 MHz)  
1. Pulse Test: Pulse Width 300 μs, D.C. 2%.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
October, 2005 − Rev. 3  
MSC3930−BT1/D  

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