Datasheet > MSC2X50SDA120J

MSC2X50SDA120J

更新时间： 2024-01-29 00:14:44

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MSC2X50SDA120J 技术参数

MSC2X51/50SDA120J Dual Silicon Carbide Schottky Barrier Diodes

Product Overview

The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the

performance over silicon diode solutions while lowering the total cost of ownership for high-voltage

applications. MSC2X51/50SDA120J are dual 1200 V, 50 A SiC SBD devices in a SOT-227 package.

Figure 2 • Anti-parallel MSC2X50SDA120J

Figure 1 • Parallel MSC2X51SDA120J

Features

The following are key features of the MSC2X51SDA120J and MSC2X50SDA120J devices:

•

No reverse recovery

Low forward voltage

Low leakage current

Avalanche-energy rated

RoHS compliant

Isolated voltage to 2500 V

Beneﬁts

The following are beneﬁts of the MSC2X51SDA120J and MSC2X50SDA120J devices:

•

High switching frequency

Low switching losses

Low noise (EMI) switching

Higher reliability systems

Increased system power density

Direct mounting to the heat sink (isolated package)

053-4108 MSC2X51/50SDA120J Datasheet Revision A

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
MSC2X50SDA170	MICROCHIP	获取价格	MSC2X50SDA170 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) device
MSC2X51SDA070	MICROCHIP	获取价格	MSC2X51SDA070 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) device
MSC2X51SDA120	MICROCHIP	获取价格	MSC2X51SDA120 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) device
MSC2X51SDA120J	MICROSEMI	获取价格	Rectifier Diode,
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