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MSC2X30SDA120 PDF预览

MSC2X30SDA120

更新时间: 2024-11-02 14:51:27
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
7页 1689K
描述
MSC2X30SDA120 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Micro

MSC2X30SDA120 数据手册

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MSC2X31/30SDA120J Dual Silicon Carbide Schottky Barrier Diodes  
Product Overview  
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the  
performance over silicon diode solutions while lowering the total cost of ownership for high-voltage  
applications. MSC2X31/30SDA120J are dual 1200 V, 30 A SiC SBD devices in a SOT-227 package.  
Figure 2 • Anti-parallel MSC2X30SDA120J  
Figure 1 • Parallel MSC2X31SDA120J  
Features  
The following are key features of the MSC2X31SDA120J and MSC2X30SDA120J devices:  
No reverse recovery  
Low forward voltage  
Low leakage current  
Avalanche-energy rated  
RoHS compliant  
Isolated voltage to 2500 V  
Benefits  
The following are benefits of the MSC2X31SDA120J and MSC2X30SDA120J devices:  
Outstanding performance at high-frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction-to-case thermal resistance  
RoHS compliant  
053-4104 MSC2X31/30SDA120J Datasheet Revision A  
1

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