Datasheet > MSC015SDA120

MSC015SDA120

更新时间： 2024-11-02 14:55:23

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
8页	1298K
描述
SiC-SBD-1200V is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip

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MSC015SDA120 数据手册

MSC015SDA120K Zero Recovery Silicon Carbide Schottky Diode

Product Overview

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the

performance over silicon diode solutions while lowering the total cost of ownership for high-voltage

applications. MSC015SDA120K is a 1200 V, 15 A SiC SBD in a two-lead TO-220 package.

Features

The following are key features of the MSC015SDA120K device:

No reverse recovery

Low forward voltage

Low leakage current

Avalanche-energy rated

RoHS compliant

•

Beneﬁts

The following are beneﬁts of the MSC015SDA120K device:

High switching frequency

Low switching losses

Low noise (EMI) switching

Higher reliability systems

Increased system power density

•

Applications

The MSC015SDA120K device is designed for the following applications:

Power factor correction (PFC)

Anti-parallel diode

•

Switch-mode power supply

Inverters/converters

Motor controllers

◦

Freewheeling diode

•

Switch-mode power supply

Inverters/converters

◦

Snubber/clamp diode

053-4119 MSC015SDA120K Datasheet Revision A

12 3 4 5 6 7 8

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