是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1200 V | 最大漏极电流 (Abs) (ID): | 103 A |
最大漏极电流 (ID): | 103 A | 最大漏源导通电阻: | 0.031 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 500 W | 最大脉冲漏极电流 (IDM): | 275 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON CARBIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSC0305W | MORESEMI |
获取价格 |
-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET | |
MSC0305W-SOP8 | MORESEMI |
获取价格 |
-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET | |
MSC030SDA070 | MICROCHIP |
获取价格 |
MSC030SDA070 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Mic | |
MSC030SDA120 | MICROCHIP |
获取价格 |
MSC030SDA120 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Mic | |
MSC030SDA120B | MICROSEMI |
获取价格 |
Rectifier Diode, | |
MSC030SDA170 | MICROCHIP |
获取价格 |
MSC030SDA170 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Mic | |
MSC035SMA070 | MICROCHIP |
获取价格 |
MSC035SMA070 is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions | |
MSC035SMA170 | MICROCHIP |
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MSC035SMA170 is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions | |
MSC0407 | ATMEL |
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Microcontroller, | |
MSC040SMA120 | MICROCHIP |
获取价格 |
MSC040SMA120 is part of our newest family of SiC MOSFET devices.?Microchip's SiC solutions |