Datasheet > MSC0305W

MSC0305W

更新时间： 2024-02-18 05:28:18

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	477K
描述
-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET

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MSC0305W 数据手册

MSC0305W

-30V(D-S) Dual P-Channel

Enhancement Mode Power MOS FET

General Features

● V_DS= -30V,I_D= -5.1A

R_DS(ON)< 105mΩ @ V_GS=-4.5V

_DS(ON)< 55mΩ @ V_GS=-10V

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Lead Free

Application

● PWM applications

● Load switch

● Power management

PIN Configuration

Marking and pin assignment

SOP-8 top view

Schematic diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSC0305W

SOP-8

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

-5.1

-20

V^GS

I_D

Drain Current-Pulsed (Note 1)

I_DM

Maximum Power Dissipation

2.5

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

℃/W

MORE Semiconductor Company Limited

http://www.moresemi.com

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