Datasheet > MSC030SDA120

MSC030SDA120

更新时间： 2023-12-06 20:06:30

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
8页	915K
描述
MSC030SDA120 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's

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MSC030SDA120 数据手册

MSC030SDA120BCT Zero Recovery Silicon Carbide Schottky Dual Diode

Product Overview

The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your

performance over silicon diode solutions while lowering your total cost of ownership for high-voltage

applications. The MSC030SDA120BCT is a 1200 V, 30 A SiC dual common cathode SBD in a three-lead TO-247

package shown below.

Features

The following are key features of the MSC030SDA120BCT device:

No reverse recovery

Low forward voltage

Low leakage current

Avalanche energy rated

RoHS compliant

•

Beneﬁts

The following are beneﬁts of the MSC030SDA120BCT device:

High switching frequency

Low switching losses

Low noise (EMI) switching

Higher reliability systems

Increased system power density

•

Applications

The MSC030SDA120BCT device is designed for the following applications:

Power factor correction (PFC)

Anti-parallel diode

•

Switch-mode power supply

Inverters/converters

Motor controllers

◦

Freewheeling diode

•

Switch-mode power supply

Inverters/converters

◦

Snubber/clamp diode

053-4114 MSC030SDA120BCT Datasheet Revision A

12 3 4 5 6 7 8

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