MSC040SMA120B4 Silicon Carbide N-Channel Power MOSFET
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Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over
silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage
applications. The MSC040SMA120B4 device is a 1200 V, 40 mΩ SiC MOSFET in a TO-247 4-lead package
with a source sense.
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Features
The following are key features of the MSC040SMA120B4 device:
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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Benefits
The following are benefits of the MSC040SMA120B4 device:
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need for external freewheeling diode
Lower system cost of ownership
Applications
The MSC040SMA120B4 device is designed for the following applications:
PV inverter, converter, and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
H/EV powertrain and EV charger
Power supply and distribution
050-7754 MSC040SMA120B4 Datasheet Revision A
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