5秒后页面跳转
MSC015SMA070 PDF预览

MSC015SMA070

更新时间: 2024-11-02 14:54:43
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
15页 5236K
描述
MSC015SMA070 is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus o

MSC015SMA070 数据手册

 浏览型号MSC015SMA070的Datasheet PDF文件第2页浏览型号MSC015SMA070的Datasheet PDF文件第3页浏览型号MSC015SMA070的Datasheet PDF文件第4页浏览型号MSC015SMA070的Datasheet PDF文件第5页浏览型号MSC015SMA070的Datasheet PDF文件第6页浏览型号MSC015SMA070的Datasheet PDF文件第7页 
700 V, 15 mΩ SiC N-Channel Power MOSFET  
MSC015SMA070B4  
Product Overview  
700 V, 15 mΩ typical at 20 VGS, 18 mΩ typical at 18 VGS, TO-247 4-lead with a source sense  
Features  
The following are key features of this device:  
Low capacitances and low gate charge  
Fast switching speed due to low internal gate resistance (ESR)  
Stable operation at high junction temperature, TJ(max) = 175 °C  
Fast and reliable body diode  
Superior avalanche ruggedness  
RoHS compliant  
Benefits  
The following are benefits of this device:  
High efficiency to enable lighter, more compact system  
Simple to drive and easy to parallel  
Improved thermal capabilities and lower switching losses  
Eliminates the need for external freewheeling diode  
Lower system cost of ownership  
Applications  
This device is designed for the following applications:  
PV inverter, converter, and industrial motor drives  
Smart grid transmission and distribution  
Induction heating and welding  
H/EV powertrain and EV charger  
Power supply and distribution  
Data Sheet  
© 2023 Microchip Technology Inc. and its subsidiaries  
DS00004986A - 1  

与MSC015SMA070相关器件

型号 品牌 获取价格 描述 数据表
MSC0203S MORESEMI

获取价格

N and P-Channel Enhancement Mode Power MOS FET
MSC0203S-SOT23 MORESEMI

获取价格

N and P-Channel Enhancement Mode Power MOS FET
MSC020SDA120 MICROCHIP

获取价格

MSC020SDA120 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Mic
MSC020SDA120B MICROSEMI

获取价格

Rectifier Diode,
MSC025SMA120 MICROCHIP

获取价格

MSC025SMA120 is part of our newest family of SiC MOSFET devices.?Microchip's SiC solutions
MSC025SMA120B4 MICROSEMI

获取价格

Power Field-Effect Transistor,
MSC0305W MORESEMI

获取价格

-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
MSC0305W-SOP8 MORESEMI

获取价格

-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
MSC030SDA070 MICROCHIP

获取价格

MSC030SDA070 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Mic
MSC030SDA120 MICROCHIP

获取价格

MSC030SDA120 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Mic