Datasheet > MSC025SMA120

MSC025SMA120

更新时间： 2023-12-06 20:10:42

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
9页	1590K
描述
MSC025SMA120 is part of our newest family of SiC MOSFET devices.?Microchip's SiC solutions focus o

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MSC025SMA120 数据手册

MSC025SMA120B4 Silicon Carbide N-Channel Power MOSFET

Product Overview

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over

silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage

applications. The MSC025SMA120B4 device is a 1200 V, 25 mΩ SiC MOSFET in a TO-247 4-lead package

with a source sense.

1.1

Features

The following are key features of the MSC025SMA120B4 device:

Low capacitances and low gate charge

Fast switching speed due to low internal gate resistance (ESR)

Stable operation at high junction temperature, TJ(max) = 175 °C

Fast and reliable body diode

Superior avalanche ruggedness

RoHS compliant

1.2

1.3

Benefits

The following are benefits of the MSC025SMA120B4 device:

High efficiency to enable lighter, more compact system

Simple to drive and easy to parallel

Improved thermal capabilities and lower switching losses

Eliminates the need for external freewheeling diode

Lower system cost of ownership

Applications

The MSC025SMA120B4 device is designed for the following applications:

PV inverter, converter, and industrial motor drives

Smart grid transmission and distribution

Induction heating and welding

H/EV powertrain and EV charger

Power supply and distribution

050-7763 MSC025SMA120B4 Datasheet Revision A

12 3 4 5 6 7...9

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