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MSC0203S-SOT23 PDF预览

MSC0203S-SOT23

更新时间: 2024-02-04 23:01:24
品牌 Logo 应用领域
摩矽 - MORESEMI /
页数 文件大小 规格书
10页 521K
描述
N and P-Channel Enhancement Mode Power MOS FET

MSC0203S-SOT23 数据手册

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MSC0203S  
N and P-Channel Enhancement Mode Power MOS FET  
General Features  
N-Channel  
VDS = 20V,ID = 3A  
R
DS(ON) < 65m@ VGS=4.5V  
DS(ON) < 90m@ VGS=2.5V  
R
Lead Free  
P-Channel  
VDS = -20V,ID = -3A  
R
DS(ON) < 110m@ VGS=-4.5V  
DS(ON) < 140m@ VGS=-2.5V  
R
High power and current handing capability  
Lead free product is acquired  
Surface mount package  
pin Assignment  
PIN Configuration  
N-channel  
P-channel  
SOT-23-6L top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
MSC0203S  
SOT-23-6L  
Ø180mm  
8mm  
3000 units  
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
N-Channel P-Channel  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
20  
-20  
±12  
VGS  
±12  
V
TA=25℃  
TA=70℃  
3
2.4  
-3  
Continuous Drain Current  
ID  
A
-2.4  
Pulsed Drain Current (Note 1)  
Maximum Power Dissipation  
IDM  
PD  
13  
-13  
A
TA=25℃  
0.8  
0.8  
W
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-55 To 150  
-55 To 150  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient (Note2)  
RθJA  
RθJA  
N-Ch  
P-Ch  
156  
156  
/W  
/W  
Thermal Resistance,Junction-to-Ambient (Note2)  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
1/10  

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