是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | R-PSFM-T2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 8.34 |
其他特性: | HIGH RELIABILITY, LOW LEAKAGE CURRENT, PD-CASE | 应用: | EFFICIENCY |
外壳连接: | CATHODE | 配置: | SINGLE |
二极管元件材料: | SILICON CARBIDE | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.8 V | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T2 | 最大非重复峰值正向电流: | 150 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 最大输出电流: | 43 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 最大功率耗散: | 166 W |
最大重复峰值反向电压: | 1200 V | 最大反向电流: | 200 µA |
反向测试电压: | 1200 V | 表面贴装: | NO |
技术: | SCHOTTKY | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSC025SMA120 | MICROCHIP |
获取价格 |
MSC025SMA120 is part of our newest family of SiC MOSFET devices.?Microchip's SiC solutions | |
MSC025SMA120B4 | MICROSEMI |
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Power Field-Effect Transistor, | |
MSC0305W | MORESEMI |
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-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET | |
MSC0305W-SOP8 | MORESEMI |
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-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET | |
MSC030SDA070 | MICROCHIP |
获取价格 |
MSC030SDA070 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Mic | |
MSC030SDA120 | MICROCHIP |
获取价格 |
MSC030SDA120 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Mic | |
MSC030SDA120B | MICROSEMI |
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Rectifier Diode, | |
MSC030SDA170 | MICROCHIP |
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MSC030SDA170 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Mic | |
MSC035SMA070 | MICROCHIP |
获取价格 |
MSC035SMA070 is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions | |
MSC035SMA170 | MICROCHIP |
获取价格 |
MSC035SMA170 is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions |