MS81V05200

更新时间： 2024-11-01 10:46:19

品牌	Logo	应用领域
冲电气 - OKI		存储先进先出芯片
页数	文件大小	规格书
25页	353K
描述
(583,680-word × 10-bit) FIFO memory

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MS81V05200 数据手册

FEDS81V05200-01

This version: Jun. 2001

Semiconductor

MS81V05200

(583,680-word × 10-bit) FIFO memory

GENERAL DESCRIPTION

The MS81V05200 is a 5.6Mb FIFO (First-In First-Out) memory designed for 583,680-words × 10-bit high-speed

asynchronous read/write operation.

The MS81V05200 is best suited for a field memory for digital TVs or LCD panels which require high-speed, large

memory, and is not designed for high end use in professional graphics systems, which require long term picture

storage and data storage.

The MS81V05200 is provided with independent control clocks to support asynchronous read and write operations.

Different clock rates are also supported, which allow alternate data rates between write and read data streams.

The first data read operation can be performed after 1600 ns + 4 cycles from read reset and the first data write

operation is enabled after 1600 ns + 4 cycles from write reset. Thereafter, the high-speed read/write operation is

possible every cycle time. Additionally, a write mask function by IE pin and a read-data skipping function by OE

pin implement image data processing easily.

The MS81V05200 provides high speed FIFO (First-in First-out) operation without external refreshing:

MS81V05200 refreshes its DRAM storage cells automatically, so that it appears fully static to the users.

Moreover, fully static type memory cells and decoders for serial access enable the refresh free serial access

operation, so that serial read and/or write control clock can be halted high or low for any duration as long as the

power is on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration

logic.

The MS81V05200’s function is simple, and similar to a digital delay device whose delay-bit- length is easily set by

reset timing. The delay length and the number of read delay clocks between write and read, is determined by

externally controlled write and read reset timings. The MS81V05200 uses a thin and small 70-pin plastic TSOP.

FEATURES

•

583,680 words × 10 bits

Fast FIFO (First-In First-Out) operation: 13 ns cycle time

Self refresh (No refresh control is required)

High speed asynchronous read/write operation

Variable length delay bit (600 to 583,680)

Single power supply: 3.3 V ±0.3 V

Package:

70-pin plastic TSOP TYPE II (TSOP(2) 70-P-400-0.5-K)

PARAMETERS

Parameter

Access Time

Symbol

t_AC

MS81V05200-TA

8 ns

Read/Write

Cycle Time

t_SWC

t_SRC

I_CC1

I_CC2

13 ns

Operation Current

Standby Current

200 mA

6 mA

1/25

12 3 4 5 6 7...25

中文翻译

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与MS81V05200相关器件

型号	品牌	获取价格	描述	数据表
MS81V05200-TA	OKI	获取价格	暂无描述
MS81V06160	OKI	获取价格	(401,408-word ⅴ 16-bit) FIFO memory
MS81V06160-15TA	OKI	获取价格	FIFO, 392KX16, 12ns, Asynchronous, CMOS, PDSO70, 0.400 INCH, 0.50 MM PITCH, PLASTIC, TSOP2
MS81V10160	OKI	获取价格	(664,320-word x 16-bit) FIFO memory
MS81V26000	OKI	获取价格	1,114,112-Word X 24-Bit Field Memory
MS81V26000-12TB	OKI	获取价格	1,114,112-Word X 24-Bit Field Memory
MS81V32321-7TB	OKI	获取价格	Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128
MS81V32322-66TB	OKI	获取价格	Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128
MS81V32322-7TB	OKI	获取价格	Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128
MS820	MCC	获取价格	8 Amp Schottky Barrier Rectifier 20 to 100 Volts

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