Datasheet > MS81V26000-12TB

MS81V26000-12TB

更新时间： 2024-02-21 06:57:03

品牌	Logo	应用领域
冲电气 - OKI		存储
页数	文件大小	规格书
20页	151K
描述
1,114,112-Word X 24-Bit Field Memory

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MS81V26000-12TB 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	TFQFP, TQFP100,.63SQ	针数：	100
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.44	最长访问时间：	9 ns
JESD-30 代码：	S-PQFP-G100	长度：	14 mm
内存密度：	25165824 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	24	功能数量：	1
端子数量：	100	字数：	1048576 words
字数代码：	1000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	1MX24	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFQFP	封装等效代码：	TQFP100,.63SQ
封装形状：	SQUARE	封装形式：	FLATPACK, THIN PROFILE, FINE PITCH
电源：	3.3 V	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最大待机电流：	0.005 A
子类别：	Other Memory ICs	最大压摆率：	0.2 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	QUAD	宽度：	14 mm

MS81V26000-12TB 数据手册

FEDSMS81V26000-02

Issue Date: Dec 15, 2004

OKI Semiconductor

MS81V26000

1,114,112-Word × 24-Bit Field Memory

GENERAL DESCRIPTION

The OKI MS81V26000 is a high performance 26-Mbit, 1,100K × 24-bit, Field Memory. It is especially designed

for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

Multi-media systems. MS81V26000 is a FRAM for wide or low end use in general commodity TVs and VTRs

exclusively. MS81V26000 is not designed for the other use or high end use in medical systems, professional

graphics systems which require long term picture storage, data storage systems and others. More than two

MS81V26000s can be cascaded directly without any delay devices among the MS81V26000s. (Cascading of

MS81V26000 provides larger storage depth or a longer delay).

Each of the 24-bit planes has separate serial write and read ports. These employ independent control clocks to

support asynchronous read and write operations. Different clock rates are also supported that allow alternate data

rates between write and read data streams.

The MS81V26000 provides high speed FIFO, First-In First-Out, operation without external refreshing:

MS81V26000 refreshes its DRAM storage cells automatically, so that it appears fully static to the users.

Moreover, fully static type memory cells and decoders for serial access enable the refresh free serial access

operation, so that serial read and/or write control clock can be halted high or low for any duration as long as the

power is on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration

logic.

The MS81V26000’s function is simple, and similar to a digital delay device whose delay-bit-length is easily set by

reset timing. The delay length, number of read delay clocks between write and read, is determined by externally

controlled write and read reset timings.

Additionally, the MS81V26000 has write mask function or input enable function (IE), and read-data skipping

function or output enable function (OE) . The differences between write enable (WE) and input enable (IE), and

between read enable (RE) and output enable (OE) are that WE and RE can stop serial write/read address

increments, but IE and OE cannot stop the increment, when write/read clocking is continuously applied to

MS81V26000. The input enable (IE) function allows the user to write into selected locations of the memory only,

leaving the rest of the memory contents unchanged. This facilitates data processing to display a “picture in picture”

on a TV screen.

1/20

12 3 4 5 6 7...20

中文翻译

下载PDF

与MS81V26000-12TB相关器件

型号	品牌	获取价格	描述	数据表
MS81V32321-7TB	OKI	获取价格	Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128
MS81V32322-66TB	OKI	获取价格	Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128
MS81V32322-7TB	OKI	获取价格	Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128
MS820	MCC	获取价格	8 Amp Schottky Barrier Rectifier 20 to 100 Volts
MS820	LUNSURE	获取价格	8Amp schottky barrier rectifier 20to100 volts
MS82000RKXLI-10	MOSAIC	获取价格	SRAM Module, 2MX8, 100ns, CMOS
MS820-B	MCC	获取价格	Rectifier Diode,
MS820-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, DO-201AD, DO-201AD
MS820-T	MCC	获取价格	暂无描述
MS820-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, DO-201AD, DO-201AD

与MS81V26000-12TB相关文章

LTM4644/LTM4644-1：创新的四输出同步降压微模块调节器
2024-07-02

2
2N3500：一款多用途NPN硅晶体管的全面解析
2024-07-02

2
最详细资料解析：BA5917AFP参数说明、引脚说明
2024-07-02

5
MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

3

产品中心

服务支持

精选活动

关于我们

帮助中心

MS81V26000-12TB

MS81V26000-12TB 技术参数

MS81V26000-12TB 数据手册

与MS81V26000-12TB相关器件

与MS81V26000-12TB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MS81V26000-12TB

MS81V26000-12TB 技术参数

MS81V26000-12TB 数据手册

与MS81V26000-12TB相关器件

与MS81V26000-12TB相关文章

您还可以找

您在本页遇到什么问题？