Datasheet > MS81V32322-66TB

MS81V32322-66TB

更新时间： 2024-02-09 01:59:45

品牌	Logo	应用领域
冲电气 - OKI		/
页数	文件大小	规格书
18页	135K
描述
Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128

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MS81V32322-66TB 技术参数

生命周期：	Contact Manufacturer	零件包装代码：	QFP
包装说明：	TFQFP,	针数：	128
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.66	JESD-30 代码：	S-PQFP-G128
长度：	14 mm	内存密度：	33554432 bit
内存集成电路类型：	MEMORY CIRCUIT	内存宽度：	32
功能数量：	1	端子数量：	128
字数：	1048576 words	字数代码：	1000000
工作模式：	ASYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	1MX32
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFQFP
封装形状：	SQUARE	封装形式：	FLATPACK, THIN PROFILE, FINE PITCH
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.4 mm
端子位置：	QUAD	宽度：	14 mm
Base Number Matches：	1

MS81V32322-66TB 数据手册

PEDSMS81V32322-01

Issue Date: Jul. 21, 2006

OKI Semiconductor

Preliminary

MS81V32322

1,114,112-Word × 32-Bit Field Memory

GENERAL DESCRIPTION

The OKI MS81V32322 is a high performance 32-Mbit, 1,100K × 32-bit, Field Memory. It is especially designed

for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

Multi-media systems. MS81V32322 is a FRAM for wide or low end use in general commodity TVs and VTRs

exclusively. MS81V32322 is not designed for the other use or high end use in medical systems, professional

graphics systems which require long term picture storage, data storage systems and others.

Each of the 32-bit planes has separate serial write and read ports. These employ independent control clocks to

support asynchronous read and write operations. Different clock rates are also supported that allow alternate data

rates between write and read data streams.

The MS81V32322 provides high speed FIFO, First-In First-Out, operation without external refreshing:

MS81V32322 refreshes its DRAM storage cells automatically, so that it appears fully static to the users.

Moreover, fully static type memory cells and decoders for serial access enable the refresh free serial access

operation, so that serial read and/or write control clock can be halted high or low for any duration as long as the

power is on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration

logic.

The MS81V32322’s function is simple, and similar to a digital delay device whose delay-bit-length is easily set by

reset timing. The delay length, number of read delay clocks between write and read, is determined by externally

controlled write and read reset timings.

Additionally, the MS81V32322 has write mask function or input enable function (IE), and read-data skipping

function or output enable function (OE) . The differences between write enable (WE) and input enable (IE), and

between read enable (RE) and output enable (OE) are that WE and RE can stop serial write/read address

increments, but IE and OE cannot stop the increment, when write/read clocking is continuously applied to

MS81V32322. The input enable (IE) function allows the user to write into selected locations of the memory only,

leaving the rest of the memory contents unchanged. This facilitates data processing to display a “picture in picture”

on a TV screen.

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与MS81V32322-66TB相关器件

型号	品牌	获取价格	描述	数据表
MS81V32322-7TB	OKI	获取价格	Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128
MS820	MCC	获取价格	8 Amp Schottky Barrier Rectifier 20 to 100 Volts
MS820	LUNSURE	获取价格	8Amp schottky barrier rectifier 20to100 volts
MS82000RKXLI-10	MOSAIC	获取价格	SRAM Module, 2MX8, 100ns, CMOS
MS820-B	MCC	获取价格	Rectifier Diode,
MS820-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, DO-201AD, DO-201AD
MS820-T	MCC	获取价格	暂无描述
MS820-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, DO-201AD, DO-201AD
MS8211	ETC	获取价格	PEN-TYPE AUTORANGING
MS8211D	ETC	获取价格	PEN-TYPE AUTORANGING

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