Datasheet > MS81V26000

MS81V26000

更新时间： 2024-02-28 22:31:11

品牌	Logo	应用领域
冲电气 - OKI		存储
页数	文件大小	规格书
20页	151K
描述
1,114,112-Word X 24-Bit Field Memory

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MS81V26000 数据手册

FEDSMS81V26000-02

Issue Date: Dec 15, 2004

OKI Semiconductor

MS81V26000

1,114,112-Word × 24-Bit Field Memory

GENERAL DESCRIPTION

The OKI MS81V26000 is a high performance 26-Mbit, 1,100K × 24-bit, Field Memory. It is especially designed

for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

Multi-media systems. MS81V26000 is a FRAM for wide or low end use in general commodity TVs and VTRs

exclusively. MS81V26000 is not designed for the other use or high end use in medical systems, professional

graphics systems which require long term picture storage, data storage systems and others. More than two

MS81V26000s can be cascaded directly without any delay devices among the MS81V26000s. (Cascading of

MS81V26000 provides larger storage depth or a longer delay).

Each of the 24-bit planes has separate serial write and read ports. These employ independent control clocks to

support asynchronous read and write operations. Different clock rates are also supported that allow alternate data

rates between write and read data streams.

The MS81V26000 provides high speed FIFO, First-In First-Out, operation without external refreshing:

MS81V26000 refreshes its DRAM storage cells automatically, so that it appears fully static to the users.

Moreover, fully static type memory cells and decoders for serial access enable the refresh free serial access

operation, so that serial read and/or write control clock can be halted high or low for any duration as long as the

power is on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration

logic.

The MS81V26000’s function is simple, and similar to a digital delay device whose delay-bit-length is easily set by

reset timing. The delay length, number of read delay clocks between write and read, is determined by externally

controlled write and read reset timings.

Additionally, the MS81V26000 has write mask function or input enable function (IE), and read-data skipping

function or output enable function (OE) . The differences between write enable (WE) and input enable (IE), and

between read enable (RE) and output enable (OE) are that WE and RE can stop serial write/read address

increments, but IE and OE cannot stop the increment, when write/read clocking is continuously applied to

MS81V26000. The input enable (IE) function allows the user to write into selected locations of the memory only,

leaving the rest of the memory contents unchanged. This facilitates data processing to display a “picture in picture”

on a TV screen.

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与MS81V26000相关器件

型号	品牌	获取价格	描述	数据表
MS81V26000-12TB	OKI	获取价格	1,114,112-Word X 24-Bit Field Memory
MS81V32321-7TB	OKI	获取价格	Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128
MS81V32322-66TB	OKI	获取价格	Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128
MS81V32322-7TB	OKI	获取价格	Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128
MS820	MCC	获取价格	8 Amp Schottky Barrier Rectifier 20 to 100 Volts
MS820	LUNSURE	获取价格	8Amp schottky barrier rectifier 20to100 volts
MS82000RKXLI-10	MOSAIC	获取价格	SRAM Module, 2MX8, 100ns, CMOS
MS820-B	MCC	获取价格	Rectifier Diode,
MS820-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, DO-201AD, DO-201AD
MS820-T	MCC	获取价格	暂无描述

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