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MS81V04166-30TB PDF预览

MS81V04166-30TB

更新时间: 2024-01-23 02:29:51
品牌 Logo 应用领域
冲电气 - OKI 先进先出芯片
页数 文件大小 规格书
19页 139K
描述
FIFO, 256KX8, 30ns, Synchronous, CMOS, PQFP100, 14 X 14 MM, 0.50 MM PITCH, PLASTIC, TQFP-100

MS81V04166-30TB 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:TFQFP,针数:100
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.77
最长访问时间:30 ns周期时间:30 ns
JESD-30 代码:S-PQFP-G100长度:14 mm
内存密度:2097152 bit内存宽度:8
功能数量:1端子数量:100
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX8
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:TFQFP封装形状:SQUARE
封装形式:FLATPACK, THIN PROFILE, FINE PITCH并行/串行:SERIAL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

MS81V04166-30TB 数据手册

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PEDS81V04166-01  
1
This version: Dec. 2001  
Semiconductor  
MS81V04166  
Preliminary  
Dual FIFO (262,214 Words × 8 Bits) × 2  
GENERAL DESCRIPTION  
The MS81V04166 is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out)  
memories which were designed for 256k × 8-bit high-speed asynchronous read/write operation.  
The read clock of each of the 2Mb FIFO memories is connected in common, and the clocks are provided  
independently of each of the FIFO memories. The MS81V04166 functionally compatible with Oki’s 2Mb FIFO  
memory (MSM51V8222A), can be used as a ×16 configuration FIFO.  
The MS81V04166 is a field memory for wide or low end use in general commodity TVs and VTRs exclusively  
and is not designed for high end use in professional graphics systems, which require long term picture storage, data  
storage, medical use and other storage systems.  
The MS81V04166 provides independent control clocks to support asynchronous read and write operations.  
Different clock rates are also supported, which allow alternate data rates between write and read data streams.  
The MS81V04166 provides high speed FIFO (First-in First-out) operation without external refreshing:  
MS81V04166 refreshes its DRAM storage cells automatically, so that it appears fully static to the users.  
Moreover, fully static type memory cells and decoders for serial access enable the refresh free serial access  
operation, so that serial read and/or write control clock can be halted high or low for any duration as long as the  
power is on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration  
logic.  
The MS81V04166’s function is simple, and similar to a digital delay device whose delay-bit-length is easily set by  
reset timing. The delay length and the number of read delay clocks between write and read, is determined by  
externally controlled write and read reset timings.  
Additional SRAM serial registers, or line buffers for the initial access of 256 × 16-bit enable high speed first-bit-  
access with no clock delay just after the write or read reset timings.  
The MS81V04166, which is provided with two sets of the serial write clocks, allows the split-screen processing to  
be implemented easily.  
Additionally, the MS81V04166 has a write mask function or input enable function (IE), and read-data skipping  
function or output enable function (OE). The differences between write enable (WE) and input enable (IE), and  
between read enable (RE) and output enable (OE) are that WE and RE can stop serial write/read address  
increments, but IE and OE cannot stop the increment, when write/read clocking is continuously applied to the  
MS81V04166. The input enable (IE) function allows the user to write into selected locations of the memory only,  
leaving the rest of the memory contents unchanged. This facilitates data processing to display a “picture in picture”  
on a TV screen.  
1/19  

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