Datasheet > MRF8P20140WHSR3

MRF8P20140WHSR3

更新时间： 2024-09-26 02:57:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	522K
描述
N-Channel Enhancement-Mode Lateral MOSFET

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MRF8P20140WHSR3 数据手册

Document Number: MRF8P20140WH

Rev. 1, 11/2013

Freescale Semiconductor

Technical Data

MRF8P20140WHR3

MRF8P20140WHSR3

MRF8P20140WGHSR3

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1880 to

2025 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

1880--2025 MHz, 24 W AVG., 28 V

SINGLE W--CDMA



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Volts,

I_DQA= 500 mA, V_GSB= 1.2 Vdc, P_out= 24 Watts Avg., IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB

@ 0.01% Probability on CCDF.

LATERAL N--CHANNEL

RF POWER MOSFETs

(dB)



(%)

Output PAR

(dB)

ACPR

(dBc)

Frequency

1880 MHz

1920 MHz

2025 MHz

16.0

15.9

42.8

43.7

42.0

8.0

8.1

--31.0

--32.6

--31.2

NI--780H--4L

MRF8P20140WHR3



Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW ⁽¹⁾

Output Power (3 dB Input Overdrive from Rated P_out

Typical P_out@ 3 dB Compression Point ≃ 170 Watts ⁽¹⁾

)

Features



Designed for Wide Instantaneous Bandwidth Applications. VBW_res

240 MHz.

≃



Designed for Wideband Applications that Require 160 MHz Signal Bandwidth

Production Tested in a Symmetrical Doherty Configuration

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Large--Signal Load--Pull Parameters and Common Source

S--Parameters

NI--780S--4L

MRF8P20140WHSR3



Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Designed for Digital Predistortion Error Correction Systems

NI--780H--4L in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,

13--inch Reel.

NI--780GS--4L

MRF8P20140WGHSR3



NI--780S--4L, NI--780GS--4L in Tape and Reel. R3 Suffix = 250 Units, 32 mm

Tape Width, 13--inch Reel.

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

1. P3dB = P

+ 7.0 dB where P

is the average output power measured using an unclipped W--CDMA single--carrier input signal where

avg

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...17

中文翻译

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MRF8P20140WHSR3 替代型号

型号	品牌	替代类型	描述	数据表
AFT18S290-13SR3	NXP	功能相似	RF POWER, FET

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