Document Number: MRF8P20140WH
Rev. 0, 4/2011
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P20140WHR3
MRF8P20140WHSR3
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
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Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
1880--2025 MHz, 24 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
G
(dB)
η
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1880 MHz
1920 MHz
2025 MHz
16.0
16.0
15.9
42.8
43.7
42.0
8.0
8.1
8.1
--31.0
--32.6
--31.2
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Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout
Typical Pout @ 3 dB Compression Point ≃ 170 Watts (1,2)
)
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRF8P20140WHR3
Features
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Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 240 MHz.
Designed for Wideband Applications that Require 160 MHz Signal Bandwidth
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
CASE 465H--02, STYLE 1
NI--780S--4
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Internally Matched for Ease of Use
Integrated ESD Protection
MRF8P20140WHSR3
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
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NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
RF /V
RF /V
outB DSB
inB GSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +65
--6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
--65 to +150
125
T
C
°C
(3)
T
J
225
°C
CW Operation @ T = 25°C
CW
140
W
C
Derate above 25°C
0.66
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. P3dB = P + 7.0 dB where P is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Continuous use at maximum temperature will affect MTTF.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8P20140WHR3 MRF8P20140WHSR3
RF Device Data
Freescale Semiconductor
1