Datasheet > MRF1535T1

MRF1535T1

更新时间： 2024-01-25 19:29:52

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频光电二极管放大器局域网
页数	文件大小	规格书
16页	257K
描述
RF Power Field Effect Transistor

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MRF1535T1 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	PLASTIC, TO-272, CASE 1264-09, 6 PIN	Reach Compliance Code：	unknown
风险等级：	5.8	配置：	SINGLE
最小漏源击穿电压：	60 V	最大漏极电流 (Abs) (ID)：	6 A
最大漏极电流 (ID)：	6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	ULTRA HIGH FREQUENCY BAND	JEDEC-95代码：	TO-272AA
JESD-30 代码：	R-PDFM-C6	元件数量：	1
端子数量：	6	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	135 W
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子形式：	C BEND
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

MRF1535T1 数据手册

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MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1

Document Number:

Rev. 6, 1/2005

MRF1535T1

RF Device Data

Freescale Semiconductor

1...13 14 1516

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