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MRF1570N PDF预览

MRF1570N

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
23页 615K
描述
RF Power Field Effect Transistors

MRF1570N 数据手册

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Document Number: MRF1570N  
Rev. 9, 6/2008  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF1570NT1  
MRF1570FNT1  
Designed for broadband commercial and industrial applications with frequen-  
cies up to 470 MHz. The high gain and broadband performance of these  
devices make them ideal for large-signal, common source amplifier applica-  
tions in 12.5 volt mobile FM equipment.  
470 MHz, 70 W, 12.5 V  
LATERAL N-CHANNEL  
BROADBAND  
Specified Performance @ 470 MHz, 12.5 Volts  
Output Power — 70 Watts  
Power Gain — 11.5 dB  
Efficiency — 60%  
RF POWER MOSFETs  
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive  
Features  
CASE 1366-05, STYLE 1  
TO-272-8 WRAP  
PLASTIC  
Excellent Thermal Stability  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
MRF1570NT1  
Broadband-Full Power Across the Band: 135-175 MHz  
400-470 MHz  
Broadband Demonstration Amplifier Information Available Upon Request  
200_C Capable Plastic Package  
CASE 1366A-03, STYLE 1  
TO-272-8  
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.  
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
PLASTIC  
MRF1570FNT1  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
+0.5, +40  
20  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
165  
0.5  
W
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
Table 2. Thermal Characteristics  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
(1)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
0.29  
°C/W  
Table 3. ESD Protection Characteristics  
Test Conditions  
Class  
Human Body Model  
1 (Minimum)  
M2 (Minimum)  
C2 (Minimum)  
Machine Model  
Charge Device Model  
Table 4. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD 22-A113, IPC/JEDEC J-STD-020  
1
260  
°C  
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  

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