MRF157

更新时间： 2024-02-24 20:42:42

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管放大器局域网
页数	文件大小	规格书
8页	182K
描述
MOS LINEAR RF POWER FET

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MRF157 数据手册

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SEMICONDUCTOR TECHNICAL DATA

The RF Power MOS Line

N–Channel Enhancement Mode

Designed primarily for linear large–signal output stages to 80 MHz.

•

Specified 50 Volts, 30 MHz Characteristics

Output Power = 600 Watts

Power Gain = 21 dB (Typ)

Efficiency = 45% (Typ)

600 W, to 80 MHz

MOS LINEAR

RF POWER FET

CASE 368–03, STYLE 2

MAXIMUM RATINGS

Rating

Symbol

Value

125

±40

Unit

Vdc

Adc

Drain–Source Voltage

Drain–Gate Voltage

DSS

DGO

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ T = 25°C

Derate above 25°C

1350

7.7

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

°C

stg

200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.13

°C/W

θJC

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1995

MRF157

12 3 4 5 6 7 8

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