MRF1550T1

更新时间： 2024-02-20 02:57:03

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	525K
描述
RF POWER FIELD EFFECT TRANSISTORS

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MRF1550T1 数据手册

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Freescale Semiconductor, Inc.

Order this document

by MRF1550T1/D

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFETs

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Designed for broadband commercial and industrial applications with frequen-

cies to 175 MHz. The high gain and broadband performance of these devices

make them ideal for large–signal, common source amplifier applications in

12.5 volt mobile FM equipment.

175 MHz, 50 W, 12.5 V

LATERAL N–CHANNEL

BROADBAND

• Specified Performance @ 175 MHz, 12.5 Volts

Output Power — 50 Watts

Power Gain — 12 dB

RF POWER MOSFETs

Efficiency — 50%

• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Broadband–Full Power Across the Band: 135–175 MHz

• Broadband Demonstration Amplifier Information Available

CASE 1264–09, STYLE 1

TO–272

Upon Request

PLASTIC

MRF1550T1

• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1264A–02, STYLE 1

TO–272 STRAIGHT LEAD

PLASTIC

MRF1550FT1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Drain–Source Voltage

Gate–Source Voltage

DSS

Drain Current — Continuous

Total Device Dissipation @ T = 25°C (1)

Derate above 25°C

165

0.50

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

175

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

0.75

°C/W

J –

(1) Calculated based on the formula P

θJC

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 6

MOTOROLA RF DEVICE DATA

MRF1550T1 MRF1550FT1

 Motorola, Inc. 2003

For More Information On This Product,

Go to: www.freescale.com

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