Datasheet > MRF1570FT1

MRF1570FT1

更新时间： 2024-11-05 04:39:07

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频光电二极管放大器局域网
页数	文件大小	规格书
20页	437K
描述
RF Power Field Effect Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF1570FT1 数据手册

Document Number: MRF1570T1

Rev. 6, 5/2006

Freescale Semiconductor

Technical Data

Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this

part replacement. N suffix added to part number to indicate transition to lead-free

terminations.

MRF1570T1

MRF1570FT1

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies up to 470 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common source amplifier applica-

tions in 12.5 volt mobile FM equipment.

470 MHz, 70 W, 12.5 V

LATERAL N-CHANNEL

BROADBAND

• Specified Performance @ 470 MHz, 12.5 Volts

Output Power — 70 Watts

Power Gain — 10 dB

RF POWER MOSFETs

Efficiency — 50%

CASE 1366-04, STYLE 1

TO-272-8 WRAP

PLASTIC

• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive

• Excellent Thermal Stability

MRF1570T1

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Broadband-Full Power Across the Band: 135-175 MHz

400-470 MHz

• Broadband Demonstration Amplifier Information Available Upon Request

• 200_C Capable Plastic Package

CASE 1366A-02, STYLE 1

TO-272-8

• Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.

PLASTIC

MRF1570FT1

Table 1. Maximum Ratings

Rating

Symbol

Value

+0.5, +40

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

165

0.5

W/°C

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

- 65 to +150

200

°C

stg

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.75

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

M2 (Minimum)

C2 (Minimum)

Machine Model

Charge Device Model

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF1570T1 MRF1570FT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...20

中文翻译

下载PDF

与MRF1570FT1相关器件

型号	品牌	获取价格	描述	数据表
MRF1570N	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF1570NT1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF1570NT1_08	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF1570T1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF158	MOTOROLA	获取价格	TMOS BROADBAND RF POWER FET
MRF158	TE	获取价格	TMOS BROADBAND RF POWER FET
MRF158	MACOM	获取价格	The Broadband RF MOSFET Line 2W, 500MHz, 28V
MRF158R	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
MRF160	MOTOROLA	获取价格	MOSFET BROADBAND RF POWER FET
MRF160	TE	获取价格	MOSFET BROADBAND RF POWER FET

与MRF1570FT1相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF1570FT1

MRF1570FT1 数据手册

与MRF1570FT1相关器件

与MRF1570FT1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF1570FT1

MRF1570FT1 数据手册

与MRF1570FT1相关器件

与MRF1570FT1相关文章

您还可以找

您在本页遇到什么问题？