Datasheet > MRF1550NT1_08

MRF1550NT1_08

更新时间： 2024-09-23 04:39:07

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描述
RF Power Field Effect Transistors

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MRF1550NT1_08 数据手册

Document Number: MRF1550N

Rev. 13, 6/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF1550NT1

MRF1550FNT1

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies to 175 MHz. The high gain and broadband performance of these devices

make them ideal for large-signal, common source amplifier applications in

12.5 volt mobile FM equipment.

175 MHz, 50 W, 12.5 V

LATERAL N-CHANNEL

BROADBAND

• Specified Performance @ 175 MHz, 12.5 Volts

Output Power — 50 Watts

Power Gain — 14.5 dB

Efficiency — 55%

RF POWER MOSFETs

• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Broadband-Full Power Across the Band: 135-175 MHz

• 200_C Capable Plastic Package

CASE 1264-10, STYLE 1

TO-272-6 WRAP

PLASTIC

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF1550NT1

CASE 1264A-03, STYLE 1

TO-272-6

PLASTIC

MRF1550FNT1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +40

Unit

Vdc

Adc

Drain-Source Voltage

Gate-Source Voltage

DSS

Drain Current — Continuous

(1)

Total Device Dissipation @ T = 25°C

165

Derate above 25°C

0.50

W/°C

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

- 65 to +150

200

°C

stg

(2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Table 3. Moisture Sensitivity Level

Test Methodology

0.75

°C/W

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

J –

1. Calculated based on the formula P

θJC

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF1550NT1 MRF1550FNT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...18

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