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MRF151G PDF预览

MRF151G

更新时间: 2024-11-18 22:45:59
品牌 Logo 应用领域
泰科 - TE 晶体晶体管射频放大器局域网
页数 文件大小 规格书
9页 250K
描述
N-CHANNEL BROADBAND RF POWER MOSFET

MRF151G 技术参数

是否Rohs认证: 符合生命周期:Transferred
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.17
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压:125 V最大漏极电流 (ID):40 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4元件数量:2
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF151G 数据手册

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Order this document  
by MRF151G/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF MOSFET Line  
N–Channel Enhancement–Mode MOSFET  
Designed for broadband commercial and military applications at frequencies  
to 175 MHz. The high power, high gain and broadband performance of this  
device makes possible solid state transmitters for FM broadcast or TV channel  
frequency bands.  
Guaranteed Performance at 175 MHz, 50 V:  
Output Power — 300 W  
Gain — 14 dB (16 dB Typ)  
Efficiency — 50%  
300 W, 50 V, 175 MHz  
N–CHANNEL  
BROADBAND  
RF POWER MOSFET  
Low Thermal Resistance — 0.35°C/W  
Ruggedness Tested at Rated Output Power  
Nitride Passivated Die for Enhanced Reliability  
D
G
G
S
(FLANGE)  
CASE 375–04, STYLE 2  
D
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
125  
125  
±40  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–Source Voltage  
Drain–Gate Voltage  
V
DSS  
V
DGO  
Gate–Source Voltage  
Drain Current — Continuous  
V
GS  
I
D
Total Device Dissipation @ T = 25°C  
P
D
500  
Watts  
C
Derate above 25°C  
2.85  
W/°C  
Storage Temperature Range  
Operating Junction Temperature  
THERMAL CHARACTERISTICS  
T
65 to +150  
200  
°C  
°C  
stg  
T
J
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.35  
°C/W  
θ
JC  
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 9  
1

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