Document Number: MRF1535N
Rev. 12, 6/2008
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF1535NT1
MRF1535FNT1
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large-signal, common source amplifier applications in
12.5 volt mobile FM equipment.
520 MHz, 35 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
• Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
RF POWER MOSFETs
Power Gain — 13.5 dB
Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Broadband-Full Power Across the Band: 135-175 MHz
400-470 MHz
450-520 MHz
CASE 1264-10, STYLE 1
TO-272-6 WRAP
PLASTIC
• 200_C Capable Plastic Package
MRF1535NT1
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1264A-03, STYLE 1
TO-272-6
PLASTIC
MRF1535FNT1
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +40
20
Unit
Vdc
Vdc
Adc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
Drain Current — Continuous
I
D
6
(1)
Total Device Dissipation @ T = 25°C
P
D
135
W
C
Derate above 25°C
0.50
W/°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
T
- 65 to +150
200
°C
°C
stg
T
J
(2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
R
0.90
°C/W
θ
JC
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
T
T
C
J –
1. Calculated based on the formula P
=
D
R
θJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF1535NT1 MRF1535FNT1
RF Device Data
Freescale Semiconductor
1