Datasheet > MPSW14

MPSW14

更新时间： 2024-09-16 22:26:15

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管达林顿晶体管
页数	文件大小	规格书
4页	117K
描述
One Watt Darlington Transistors(NPN Silicon)

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数据手册

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MPSW14 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR 3

BASE

EMITTER 1

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

Adc

CES

CBO

EBO

CASE 29–05, STYLE 1

TO–92 (TO–226AE)

Collector Current — Continuous

1.0

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

2.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

—

Vdc

nAdc

(BR)CES

(I = 100 µAdc, V

= 0)

Collector Cutoff Current

(V = 30 Vdc, I = 0)

100

CBO

Emitter Cutoff Current

EBO

= 10 Vdc, I = 0)

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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与MPSW14相关器件

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MPSW14RLRA	MOTOROLA	获取价格	1000mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW14RLRE	ONSEMI	获取价格	1000mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW14RLRF	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-92
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