Datasheet > MPSW3725D75Z

MPSW3725D75Z

更新时间： 2024-09-17 15:44:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器晶体管
页数	文件大小	规格书
8页	67K
描述
Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-226

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技术参数
数据手册

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MPSW3725D75Z 技术参数

生命周期：	Obsolete	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.8
最大集电极电流 (IC)：	1.2 A	集电极-发射极最大电压：	40 V
配置：	SINGLE	最小直流电流增益 (hFE)：	25
JEDEC-95代码：	TO-226	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

MPSW3725D75Z 数据手册

MPSW3725

TO-226

NPN Transistor

This device is designed for high current, low impedance line

driver applications. Sourced from Process 26.

Absolute Maximum Ratings

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

6.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.2

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSW3725

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

1.0

8.0

125

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

°C/W

1999 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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