MPSW42
One Watt High Voltage
Transistor
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
300
300
6.0
Unit
Vdc
BASE
V
CEO
V
CBO
V
EBO
Vdc
1
EMITTER
Vdc
Collector Current − Continuous
I
C
500
mAdc
Total Device Dissipation @ T = 25°C
P
D
1.0
8.0
W
mW/°C
A
Derate above 25°C
Total Device Dissipation @ T = 25°C
P
D
2.5
20
W
mW/°C
C
Derate above 25°C
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
1
1
2
2
3
3
THERMAL CHARACTERISTICS
Characteristic
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
Symbol
Max
125
50
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
MARKING DIAGRAM
R
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MPS
W42
AYWW G
G
MPSW42 = Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
MPSW42
TO−92
5000 Units/Box
5000 Units/Box
MPSW42G
TO−92
(Pb−Free)
MPSW42RLRA
TO−92
2000/Tape & Reel
2000/Tape & Reel
MPSW42RLRAG
TO−92
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
August, 2010 − Rev. 7
MPSW42/D