Datasheet > MPSW3725J18Z

MPSW3725J18Z

更新时间： 2024-11-08 03:49:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	67K
描述
Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-226, 3 PIN

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MPSW3725J18Z 数据手册

MPSW3725

TO-226

NPN Transistor

This device is designed for high current, low impedance line

driver applications. Sourced from Process 26.

Absolute Maximum Ratings

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

6.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.2

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSW3725

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

1.0

8.0

125

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

°C/W

1999 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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