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MPSW42RLRF PDF预览

MPSW42RLRF

更新时间: 2024-11-07 13:11:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管开关高压
页数 文件大小 规格书
4页 144K
描述
500mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

MPSW42RLRF 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.7
最大集电极电流 (IC):0.5 A基于收集器的最大容量:3 pF
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
功耗环境最大值:2.5 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:0.5 VBase Number Matches:1

MPSW42RLRF 数据手册

 浏览型号MPSW42RLRF的Datasheet PDF文件第2页浏览型号MPSW42RLRF的Datasheet PDF文件第3页浏览型号MPSW42RLRF的Datasheet PDF文件第4页 
Order this document  
by MPSW42/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
2
3
1
EMITTER  
CASE 29–05, STYLE 1  
TO–92 (TO–226AE)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
300  
300  
6.0  
Vdc  
Vdc  
Collector Current — Continuous  
I
C
500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watt  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = 1.0 mAdc, I = 0)  
V
V
300  
300  
6.0  
Vdc  
Vdc  
(BR)CEO  
C
B
Collector–Base Breakdown Voltage  
(I = 100 µAdc, I = 0)  
(BR)CBO  
C
E
Emitter–Base Breakdown Voltage  
(I = 100 µAdc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 200 Vdc, I = 0)  
I
0.1  
0.1  
µAdc  
µAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = 6.0 Vdc, I = 0)  
E
I
EBO  
EB  
C
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

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