5秒后页面跳转
MPSW42G PDF预览

MPSW42G

更新时间: 2024-09-17 10:48:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关高压
页数 文件大小 规格书
4页 93K
描述
One Watt High Voltage Transistor

MPSW42G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.2Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-226JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MPSW42G 数据手册

 浏览型号MPSW42G的Datasheet PDF文件第2页浏览型号MPSW42G的Datasheet PDF文件第3页浏览型号MPSW42G的Datasheet PDF文件第4页 
MPSW42  
One Watt High Voltage  
Transistor  
NPN Silicon  
http://onsemi.com  
Features  
PbFree Packages are Available*  
COLLECTOR  
3
MAXIMUM RATINGS  
2
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
300  
300  
6.0  
Unit  
Vdc  
BASE  
V
CEO  
V
CBO  
V
EBO  
Vdc  
1
EMITTER  
Vdc  
Collector Current Continuous  
I
C
500  
mAdc  
Total Device Dissipation @ T = 25°C  
P
D
1.0  
8.0  
W
mW/°C  
A
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
P
D
2.5  
20  
W
mW/°C  
C
Derate above 25°C  
TO92 1 WATT  
(TO226)  
CASE 2910  
STYLE 1  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
1
1
2
2
3
3
THERMAL CHARACTERISTICS  
Characteristic  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
q
JA  
MARKING DIAGRAM  
R
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MPS  
W42  
AYWW G  
G
MPSW42 = Device Code  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MPSW42  
TO92  
5000 Units/Box  
5000 Units/Box  
MPSW42G  
TO92  
(PbFree)  
MPSW42RLRA  
TO92  
2000/Tape & Reel  
2000/Tape & Reel  
MPSW42RLRAG  
TO92  
(PbFree)  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 Rev. 7  
MPSW42/D  

MPSW42G 替代型号

型号 品牌 替代类型 描述 数据表
MPSW42RLRA ONSEMI

完全替代

One Watt High Voltage Transistor
KSP42BU ONSEMI

类似代替

NPN外延硅晶体管

与MPSW42G相关器件

型号 品牌 获取价格 描述 数据表
MPSW42RL MOTOROLA

获取价格

暂无描述
MPSW42RLRA ONSEMI

获取价格

One Watt High Voltage Transistor
MPSW42RLRAG ONSEMI

获取价格

One Watt High Voltage Transistor
MPSW42RLRE ONSEMI

获取价格

TRANSISTOR 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AE, 3 PIN, BIP Ge
MPSW42RLRF MOTOROLA

获取价格

500mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW45 MOTOROLA

获取价格

One Watt Darlington Transistors
MPSW45 ONSEMI

获取价格

One Watt Darlington Transistors(NPN Silicon)
MPSW45_06 ONSEMI

获取价格

One Watt Darlington Transistors NPN Silicon
MPSW45A MOTOROLA

获取价格

One Watt Darlington Transistors
MPSW45A ONSEMI

获取价格

One Watt Darlington Transistors(NPN Silicon)